FEATURES Low noise: 0.3 μV p-p at 0.1 Hz to 10 Hz Low nonlinearity: 0.003% (G = 1) High CMRR: 120 dB (G = 1000) Low offset voltage: 50 μV Low offset voltage drift: 0.5 μV/°C Gain bandwidth product: 25 MHz Pin programmable gains of 1, 10, 100, 1000 Input protection, power-on/power-off No external components required Internally compensated MIL-STD-883B and chips available 16-lead ceramic DIP and SOIC packages and 20-terminal leadless chip carrier available Available in tape and reel in accordance with EIA-481A standard Standard military drawing also available
